IPD068P03L3G ibikoresho bishya byumwimerere bya elegitoronike IC chip MCU BOM serivisi muri stock IPD068P03L3G
Ibiranga ibicuruzwa
UBWOKO | GUSOBANURIRA |
Icyiciro | Ibicuruzwa bya Semiconductor |
Mfr | Ikoranabuhanga rya Infineon |
Urukurikirane | OptiMOS ™ |
Amapaki | Tape & Reel (TR) Kata Tape (CT) Digi-Reel® |
Imiterere y'ibicuruzwa | Bikora |
Ubwoko bwa FET | Umuyoboro |
Ikoranabuhanga | MOSFET (Oxide Metal) |
Kuramo Amashanyarazi (Vdss) | 30 V. |
Ibiriho - Gukomeza Umuyoboro (Id) @ 25 ° C. | 70A (Tc) |
Gutwara Umuvuduko (Max Rds Kuri, Min Rds Kuri) | 4.5V, 10V |
Rds Kuri (Max) @ Id, Vgs | 6.8mOhm @ 70A, 10V |
Vgs (th) (Max) @ Id | 2V @ 150µA |
Kwishyuza Irembo (Qg) (Max) @ Vgs | 91 nC @ 10 V. |
Vgs (Max) | ± 20V |
Ubushobozi bwinjiza (Ciss) (Max) @ Vds | 7720 pF @ 15 V. |
Ikiranga | - |
Gukwirakwiza Imbaraga (Max) | 100W (Tc) |
Gukoresha Ubushyuhe | -55 ° C ~ 175 ° C (TJ) |
Ubwoko bwo Kuzamuka | Umusozi |
Ibikoresho byo gutanga ibikoresho | PG-TO252-3 |
Ipaki / Urubanza | TO-252-3, DPak (2 Iyobora + Tab), SC-63 |
Umubare wibicuruzwa shingiro | IPD068 |
Inyandiko & Itangazamakuru
UBWOKO BW'UMUTUNGO | LINK |
Datasheets | IPD068P03L3 G. |
Izindi nyandiko zijyanye | Igice Umubare Umubare |
Ibicuruzwa byihariye | Sisitemu yo gutunganya amakuru |
HTML Datasheet | IPD068P03L3 G. |
Icyitegererezo cya EDA | IPD068P03L3GATMA1 na Ultra Librarian |
Ibidukikije & Kohereza ibicuruzwa mu byiciro
ATTRIBUTE | GUSOBANURIRA |
Imiterere ya RoHS | ROHS3 Yubahiriza |
Urwego rwo Kumva neza Ubushuhe (MSL) | 1 (Unlimited) |
SHAKA Imiterere | SHAKA Kutagira ingaruka |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Ibikoresho by'inyongera
ATTRIBUTE | GUSOBANURIRA |
Andi mazina | IPD068P03L3GATMA1DKR IPD068P03L3GATMA1-ND SP001127838 IPD068P03L3GATMA1CT IPD068P03L3GATMA1TR |
Ububiko busanzwe | 2,500 |
Transistor
Transistor ni aigikoresho cya semiconductorKurikwaguracyangwahinduraibimenyetso by'amashanyarazi kandiimbaraga.Transistor nimwe mubice byibanze byubaka bigezwehoibikoresho bya elegitoroniki.[1]Igizwe naibikoresho bya semiconductor, mubisanzwe hamwe byibuze bitatuindangantegoKuri Kwihuza Kumurongo wa elegitoroniki.A.voltagecyangwaikigezwehoByashyizwe kumurongo umwe wa tristoriste ya tristoriste igenzura ikigezweho binyuze murindi jambo ryanyuma.Kuberako imbaraga zagenzuwe (zisohoka) zishobora kuba hejuru kurenza imbaraga zo kugenzura (kwinjiza), transistor irashobora kongera ibimenyetso.Transistors zimwe zapakiwe kugiti cyazo, ariko izindi nyinshi usanga zinjijwemoimiyoboro ihuriweho.
Australiya-Hongiriya umuhanga mu bya fiziki Julius Edgar Lilienfeldyatanze igitekerezo cya aumurima-ngaruka transistormuri 1926, ariko ntibyashobokaga kubaka mubyukuri igikoresho gikora icyo gihe.[2]Igikoresho cya mbere cyakazi cyubatswe ni apoint-contact transistoryahimbwe mu 1947 n'abahanga mu bya fiziki b'AbanyamerikaJohn BardeennaWalter Brattainmugihe ukora munsiWilliam ShockleykuriInzogera.Batatu basangiye 1956Igihembo cyitiriwe Nobel muri fizikikubyo bagezeho.[3]Ubwoko bwakoreshejwe cyane bwa transistor niicyuma - oxyde - igice cya semiconductor umurima-ngaruka transistor(MOSFET), yahimbwe naMohamed AtallanaDawon Kahngmuri Bell Labs mu 1959.[4][5][6]Transistors yahinduye urwego rwa elegitoroniki, kandi itanga inzira ntoya kandi ihendutseamaradiyo,kubara, namudasobwa, mu bindi bintu.
Transistor nyinshi ikozwe mubintu byera cyanesilicon, na bamwe Kuvagermanium, ariko ibindi bikoresho bimwe bya semiconductor rimwe na rimwe bikoreshwa.Transistor irashobora kugira ubwoko bumwe gusa bwo gutwara ibintu, muri tristoriste yumurima, cyangwa irashobora kugira ubwoko bubiri bwubwikorezi muribipolar ihuza transistoribikoresho.Ugereranije navacuum tube, transistors muri rusange ni nto kandi bisaba imbaraga nke zo gukora.Imiyoboro imwe ya vacuum ifite ibyiza kurenza transistoriste kumurongo mwinshi cyane cyangwa voltage ikora cyane.Ubwoko bwinshi bwa tristoriste bukozwe mubisanzwe byemewe nababikora benshi.